| 摘要 |
PURPOSE: A cleaning method after a CMP(Chemical Mechanical Polishing) process is provided to reduce the damage of an oxide layer and improve cleaning efficiency by lessening the etching rate for the oxide layer using a cleaning solution containing NH4F. CONSTITUTION: A cleaning solution contains an HF solution and an NH4F solution. The cleaning solution contains the HF solution of 0.5 wt%. The mixing rate between the NH4F solution and the HF solution is 20:1. The cleaning process is carried out for 1 minute, or less. The cleaning solution is for silica and ceria based slurry. The cleaning process is capable of being carried out by using a cleaning solution containing H2O2.
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