| 摘要 |
<P>PROBLEM TO BE SOLVED: To display a high quality picture having no flicker, etc. by more completely shielding the semiconductor layer of a thin film transistor from light in an electro-optical device. <P>SOLUTION: In the electro-optical device, data lines(6a), scanning lines(3a), pixel electrodes(9a) and TFTs (Thin Film Transistors) are provided on a substrate as part of layered structure. Moreover, storage capacitors (70) each of which is electrically connected to the TFT, and the pixel electrode and shield layers_(400) each of which is arranged between the data line and the pixel electrode, are provided on the substrate as part of the layered structure. Since a groove (12cv) is formed at the lateral direction of the TFT, and the scanning line is embedded in the inside of the groove, light incidence from the lateral direction to a semiconductor layer_(1a) is suppressed. <P>COPYRIGHT: (C)2004,JPO |
