发明名称 PHASE CHANGE MEMORY AND METHOD THEREFOR
摘要 Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include an electrode, an adhesive material, an insulating material between the electrode and the adhesive material, wherein a portion of the adhesive material, a portion of the insulating material, and a portion of the electrode form a substantially planar surface. The phase change memory may further include a phase change material on the substantially planar surface and contacting the electrode, the adhesive material, and the insulating material.
申请公布号 US2004113136(A1) 申请公布日期 2004.06.17
申请号 US20020319753 申请日期 2002.12.13
申请人 DENNISON CHARLES H. 发明人 DENNISON CHARLES H.
分类号 H01L27/115;H01L45/00;(IPC1-7):H01L47/00 主分类号 H01L27/115
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