发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FOR RESTRAINING IMPURITIES FROM OUT-DIFFUSING
摘要 PURPOSE: A semiconductor device and a method of manufacturing the same are provided to restrain impurities from out-diffusing by distributing non-uniformly the impurities over an isolation layer. CONSTITUTION: A semiconductor device includes an isolation layer filled in a groove of a substrate. The isolation layer contains predetermined impurities. The concentration of the impurities is gradually decreased from bottom to top in the isolation layer, so that out-diffusion of the impurities is restrained.
申请公布号 KR20040050826(A) 申请公布日期 2004.06.17
申请号 KR20030050235 申请日期 2003.07.22
申请人 RENESAS TECHNOLOGY CORP. 发明人 KITAZAWA MASASHI;KUROI TAKASHI
分类号 H01L21/76;H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址