| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing slurry for polishing a platinum-base metal film with CMP method and to provide a manufacturing method having high electrical reliability, for a semiconductor device having a lower electrode consisting of the platinum-base metal film. <P>SOLUTION: An SiO<SB>2</SB>film 13 is formed on an insulating film embedded with plugs 11. Then, holes (openings) 14 are formed in the SiO<SB>2</SB>film 13, followed by forming an Ru film 15 which is the platinum-base metal film in the holes 14 and on the SiO<SB>2</SB>film. The resultant is polished by CMP method using the polishing slurry comprising periodic acid, benzotriazole and abrasive grain to form lower electrodes consisting of the platinum-base metal film inside the openings. Thereafter, a dielectric film and a film serving as upper electrodes are sequentially formed. Since polished surfaces of the lower electrodes are remarkably flat and smooth, leakage current that flows through the dielectric film is suppressed to remarkably improve retention characteristics for information charges which are stored in a capacitor. Thus, time for retaining the stored information charges is increased, which in turn ensures high reliability in the capacitor. <P>COPYRIGHT: (C)2004,JPO |
