| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method and a device therefor which are capable of simply setting the size of a pattern. SOLUTION: In accordance with a difference between the size of an actual pattern obtained by processing under an exposure condition reduced in the change of the pattern size even when the focus of light in exposure is changed or a pivotal point, and a mask pattern size or a pivotal shift, a switching picture for switching whether a substrate processing condition is set or not is indicated to operate the processing device. When the substrate processing condition is set in accordance with the pivotal shift, a kind selecting picture which shows what kind is selected from the substrate processing condition consisting of the kind of photo resist, the kind of pattern size and the kind of a pattern shape and a picture for selecting the substrate processing condition to select one substrate processing condition from a plurality of substrate processing conditions in the same kinds in various kinds respectively selected by the picture for selecting the kind are indicated to operate the device. The optimum developing time is obtained based on correlation between the developing time in selected respective substrate processing conditions and the pivotal shift whereby the pattern size can be simply set. COPYRIGHT: (C)2004,JPO |
