| 摘要 |
PROBLEM TO BE SOLVED: To successively perform various processes such as a process for forming a thin film on a substrate and a process for annealing the formed thin film while maintaining airtightness. SOLUTION: A method for manufacturing a thin film integrated circuit uses a multi-chamber device in which first, second, and third processing chambers capable of reducing the internal pressure are provided. The first, second, and third processing chambers are connected to each another via a common chamber capable of reducing the internal pressure. A means for conveying a glass substrate to each processing chamber is provided in the common chamber. In the method by forming SiOFx on a glass substrate 201 in the first processing chamber, a silicon oxide film 203 on the SiOFx in the second processing chamber, and an amorphous silicon film on the oxide silicon film in the third processing chamber; the SiOFx, the oxide silicon film, and the amorphous silicon film are formed successively without being exposed to the atmosphere. COPYRIGHT: (C)2004,JPO |
