| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper alloy sputtering target which can form a stable and uniform seed layer free of flocculation particularly in copper electroplating on a wiring material of a semiconductor element and has an excellent sputter deposition characteristic and semiconductor element wiring formed by using the target. SOLUTION: The copper alloy sputtering target contains 0.5 to 4.0wt% Al, in which Si is≤0.5 wtppm, the copper alloy sputtering target contains 0.5 to 4.0wt% Sn, in which Mn is≤0.5 wtppm, and the copper alloy sputtering target contains≤1.0 wtppm, in total, one or≥2 elements selected from Sb, Zr, Ti, Cr, Ag, Au, Cd, In, and As in addition to the above. COPYRIGHT: (C)2004,JPO |
