| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device where both NFP and FFP have a uniform distribution of light intensity. SOLUTION: The semiconductor laser device 40 has the same layered structure as a conventional broad area-type semiconductor laser device has except that regions 44 located at the sides of a light emitting region 42 of an AlGaAs active layer 18 and a p-AlGaAs clad layer 20 are two-dimensionally photonic-crystallized. A two-dimensional photonic crystal structure provided in the regions 44 located at both the sides of the light emitting region 42 has the property of hardly transmitting laser rays having a wavelength of 780μm in the region 44 in a direction parallel with a stripe-like ridge (lengthwise direction of a resonator). Laser rays traveling in the lengthwise direction of a resonator are present only in the light emitting region 42 sandwiched between the two photonic crystal regions 44, so that laser rays are trapped in a lateral direction by the photonic crystal regions 44. The laser rays are trapped by the regions 44, whereby an optical loss occurring at both the edges of the stripe serving as a light trapping interface can be restrained, a wavefront is less curved, and both NFP and FFP have a uniform distribution of light intensity. COPYRIGHT: (C)2004,JPO
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