| 摘要 |
PROBLEM TO BE SOLVED: To to provide a semiconductor memory which can accurately generate internal circuit start timing in particular, and can recover from a defect when a dummy memory cell has a defect, as to the semiconductor memory which generates the internal circuit start timing by using a dummy circuit. SOLUTION: This semiconductor memory includes a memory array including a plurality of memory cells and a plurality of dummy cells, a control circuit for selectively activating a plurality of control lines, a column selector for selecting the column, an amplifier circuit, a dummy column selector for selecting the dummy column, and an amplifier control circuit, and in the semiconductor memory, a plurality of control lines selectively activated by the control circuit are connected to different dummy cells, respectively. COPYRIGHT: (C)2004,JPO
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