SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To dissolve adverse influences on a performance of a MISFET by a stress from a trench isolation in an active region. SOLUTION: A gate of a PMISFET which requires a high current capacity is a high driving force gate 10ph disposed in a discontinuous active region R10p or a high driving force gate 20ph disposed in a two-input active region R20p. The gate of the PMISFET which does not require so much higher current capacity is a normal gate 30pu disposed in a continuous active region R30p. As the high driving force gate 10ph or 20ph is disposed in the discontinuous active region R10p or the two-input active region R20p, a high driving p-channel-type MISFET can be attained by utilizing a right hole caused by a lattice distortion. COPYRIGHT: (C)2004,JPO