| 摘要 |
In a CMOS image sensor comprising a plurality of unit cells arranged in a matrix array in the vertical and the horizontal directions to read out a signal from first and second photodiodes 52a, 52b through a common transistor portion, the first and the second photodiodes are arranged separately to each other in the vertical direction. The transistor portion comprises a pair of readout transistors, a reset transistor, an amplifying transistor and a selecting transistor. The pair of the readout transistors and the reset transistor are located adjacent to a floating diffusion region of an approximately rectangular shape. Four gate lines controlling the gates of respective transistors are extended in the horizontal direction of the matrix, and form at least one double-layered line.
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