| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element including a photodetector in which high photo-detection efficiency is realized, and time or labor required for production process is reduced, and to provide a method for producing the element. SOLUTION: The photodetector (photoelectric conversion element) includes an Si layer 4 and a photo-detection part 6 having an SiGe layer 5 embedded within a groove formed in the Si layer 4. Width of the groove is set to be larger than critical thickness indicating the maximum thickness at which lattice-mismatch does not occur in the SiGe layer 5 when the layer 5 is stacked in a contact manner on the Si layer 4, and set to be a value not more than twice as the critical thickness. COPYRIGHT: (C)2004,JPO
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