发明名称 Resonant cavity device array for WDM application and the fabrication method of the same
摘要 The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.
申请公布号 US2004114645(A1) 申请公布日期 2004.06.17
申请号 US20030395240 申请日期 2003.03.25
申请人 WANG JYH-SHYANG;WU YI-TSUO;MALEEV NIKOLAI A.;SAKHAROV ALEXEY V.;KOVSH ALEXEY R. 发明人 WANG JYH-SHYANG;WU YI-TSUO;MALEEV NIKOLAI A.;SAKHAROV ALEXEY V.;KOVSH ALEXEY R.
分类号 H01S5/183;H01S5/343;H01S5/40;H01S5/42;(IPC1-7):H01S3/13 主分类号 H01S5/183
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