SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

An n-type semiconductor layer (11) of a light-emitting layer (2) is composed of AlGaInP, and an Au layer is formed on a surface of the n-type semiconductor layer (11) via a transition metal layer. By conducting a heat treatment at a temperature lower than the eutectic point of Ga and Au, Au is diffused into the n-type semiconductor layer (11) via the transition metal layer (17), thereby forming an ohmic contact region (4) having a thickness of 20-1,000 angstroms and a low light absorptance. After removing the transition metal layer and the Au layer, a light-reflecting layer (5) is formed on the surface of the n-type semiconductor layer (11) and the surface of the ohmic contact region (4). The light-reflecting layer (5) is composed of Al and is electrically conductive. A conductive supporting substrate (8) which is composed of Si doped with impurities is bonded to the light-reflecting layer (5) via first and second junction metal layers (6, 7).