发明名称 |
MANUFACTURING APPARATUS OF SILICON PHOTOVOLTAIC ELEMENT, THE SILICON PHOTOVOLTAIC ELEMENT, AND ITS MANUFACTURING METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a silicon photovoltaic element which can manufacture a film at a low temperature and which can improve a photoelectric conversion efficiency by suppressing the mixture of a phosphorus in a crystalline i-type layer. <P>SOLUTION: The apparatus for manufacturing the silicon photovoltaic element includes a discharging electrode 14, and a substrate 1 disposed oppositely to the electrode 14, thereby manufacturing a crystalline silicon layer on the substrate 1. The apparatus further includes a film forming surface heater 16 having a heating element with air permeability between the substrate 1 and the electrode 14. The method for manufacturing the silicon photovoltaic element uses the apparatus for manufacturing the element described above. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004172269(A) |
申请公布日期 |
2004.06.17 |
申请号 |
JP20020334890 |
申请日期 |
2002.11.19 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
MORITA SHOJI;YONEKURA YOSHIMICHI;YAMASHITA NOBUKI;NAKANO YOJI;KUREYA MASAYUKI |
分类号 |
C23C16/24;C23C16/46;H01L21/205;H01L31/04;(IPC1-7):H01L31/04 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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