| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an improved heat emission effect and excellent productivity, and a manufacturing method thereof. <P>SOLUTION: The semiconductor device 900 includes a semiconductor substrate 101. In a center region 901 excluding the peripheral region 903 of the back 309 of the semiconductor substrate 101, a heat emission film 911 is installed. Due to this heat emission film 911 having a high heat emission coefficient, heat generated by the operation of an electronic circuit formed on the semiconductor substrate 101 is emitted to the outside of the semiconductor device 900 without mounting a heat dissipating component. The heat emission film 911 can be formed in a manufacturing process similar to the existing WCSP manufacturing process, and therefore a thermal resistance can be reduced with maintaining the features of the WCSP, such as a thin type and lightweight without the increase of the manufacturing cost of the semiconductor. <P>COPYRIGHT: (C)2004,JPO</p> |
