| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of utilizing a step of a recessed part formed on the surface of an epitaxial layer as an alignment mark. <P>SOLUTION: In the semiconductor device manufacturing method capable of utilizing the ruggedness of a surface as an alignment mark in a semiconductor device manufacturing process, a film allowed to be selectively etched is formed on the whole surface of a semiconductor substrate on which ruggedness appears, and the film is etched back so that the film is left only in the recessed part formed on the surface of the semiconductor substrate. While using the film left in the recessed part as an etching mask, the exposed surface of the semiconductor substrate is etched to form a step to be used as an alignment mark. <P>COPYRIGHT: (C)2004,JPO</p> |
