METHOD OF MANUFACTURING FLASH MEMORY

摘要

A method of manufacturing a flash memory is provided. A semiconductor substrate with a tunnel dielectric layer, a conductive layer and a mask layer sequentially formed thereon is provided. The mask layer, the conductive layer, the tunnel dielectric layer and the substrate are patterned to form a trench in the substrate. Thereafter, an insulating layer is formed inside the trench with the upper surface of the insulating layer at a level between the conductive layer and the substrate. A conductive spacer is formed on the sidewall of the mask layer and a portion of the conductive layer. The conductive layer and the conductive spacer together form a floating gate. The mask layer is removed and then an inter-gate dielectric layer is formed over the floating gate. A control gate is formed over the substrate.