发明名称 |
METAL LINE OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF |
摘要 |
PURPOSE: A metal line of a semiconductor device and a forming method thereof are provided to increase the contact surface between a conductive pad and a conductive pattern for reducing the contact resistance of the metal line and improving signal transmitting speed by forming the conformal conductive pad. CONSTITUTION: A metal line of a semiconductor device is provided with a semiconductor substrate(100), the first and second interlayer dielectric(72,84) sequentially deposited on the semiconductor substrate, pad contact holes(74) formed at the first interlayer dielectric, and plug contact holes(89) vertically formed on the pad contact holes at the second interlayer dielectric. The metal line further includes conductive pads(76,78) formed on the inner walls of the pad contact holes for being electrically connected with the semiconductor substrate, and contact plugs(85,92) electrically connected with the conductive pads by filling the plug contact hole and pad contact hole.
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申请公布号 |
KR20040050407(A) |
申请公布日期 |
2004.06.16 |
申请号 |
KR20020078231 |
申请日期 |
2002.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, JAE YEONG;KIM, JIN GYUN;KIM, YEONG PIL;LEE, MYEONG BEOM |
分类号 |
H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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