| 摘要 |
An insulated gate semiconductor device comprising a semiconductor substrate (1) having a top surface and an insulated gate (21,22) formed on the top surface from a layered structure (2) that comprises at least one electrically insulating layer (22), wherein at least one strip (41,42) of the layered structure (2) is disposed on an area of the top surface between an edge of the insulated gate (21,22) and a first main contact (6). <??>A manufacturing method for an insulated gate semiconductor device comprising the steps of forming a cell window (3) in said layered structure (2), forming at least one process mask (51) that partially covers the cell window (3) and extends to at least partially cover said at least one strip (41,42) of the layered structure, said at least one strip (41,42) serving as an edge for the at least one process mask (51). <IMAGE> |
