METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING SILICIDE LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device having a silicide layer is provided to simplify the manufacturing process and easily carry out a contact forming process by forming a silicide barrier pattern having a single deposition structure. CONSTITUTION: A silicide barrier pattern having a single deposition structure is formed on a silicon substrate(30) for partially exposing the silicon substrate. A thin film containing predetermined material for a silicidation is formed on the upper surface of the resultant structure. A heat treatment is carried out on the resultant structure for transforming the thin film of the first region into a silicide layer(34a). The thin film of the second region is removed from the resultant structure for partially exposing the silicide barrier pattern. The exposed silicide barrier pattern is removed. An insulating layer(36a) is formed on the resultant structure. The first and second contact hole(38a,38b) are formed in the insulating layer for partially exposing the silicon substrate and the silicide layer, respectively.