| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to roundly form the upper corner of the isolation layer by generating the difference of an etch rate between the center and lateral portion of an insulating layer for the isolation layer using an ion implantation. CONSTITUTION: A pad oxide pattern(302) and a pad nitride pattern(303) are formed on a semiconductor substrate(301). A trench is formed in the semiconductor substrate. An insulating layer(306) is formed on the resultant structure for completely filling the trench. A CMP(Chemical Mechanical Polishing) process is carried out on the insulating layer until the pad nitride pattern is exposed. An ion implantation is carried out for generating the defects on the insulating layer. The pad nitride pattern is removed as much as a desired thickness for exposing the lateral portion of the insulating layer. The upper corner of the insulating layer is roundly formed by carrying out an etching process.
|
