SiC-misfet and method for fabricating the same

摘要

A storage-type (accumulation-type) SiC-MISFET includes a SiC substrate, an n-type drift layer, a p-type well region, an n-type source region, a SiC channel layer which contains an n-type impurity and is a storage-type (accumulation-type) channel layer, a p-type heavily doped contact layer to contact the well layer, a gate insulation film, a gate electrode. The storage-type SiC-MISFET is characterized by a heavily doped layer formed by implanting ions of a p-conductivity type into an upper surface portion of the n-type drift layer at a higher concentration than that in the well region, before the formation of the channel layer. The planar gate SiC-MISFET can be of the vertical or of the horizontal type.