| 摘要 |
PURPOSE: A method for separating a thick film semiconductor is provided to utilize a GaN-based thick film semiconductor as a new semiconductor substrate by separating the GaN-based thick film semiconductor from a sapphire substrate. CONSTITUTION: A thick film semiconductor layer(22) used as a new semiconductor substrate is formed on an upper surface of a sapphire substrate(21). A buffer layer(23) is formed between the thick film semiconductor layer and the sapphire substrate. The thermal expansion coefficient of the buffer layer is different from the thermal expansion coefficients of the thick film semiconductor layer and the sapphire substrate. The buffer layer is separated from the thick film semiconductor layer and the sapphire substrate by performing a heating process and a cooling process.
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