| 摘要 |
PURPOSE: A method for fabricating a magnetic garnet single-crystalline layer and a magnetic garnet single-crystalline layer thereby are provided to switch the magnetization of the magnetic garnet single-crystalline layer under the low external magnetic field by reducing the saturated magnetization. CONSTITUTION: A liquid phase epitaxial growth process is performed on a single-crystalline non-magnetic garnet substrate by using raw material powders including Ga203 of 1 to 3 weight percent and Na2CO3 of 5 to 10 weight percent. A magnetic garnet single-crystalline layer is formed by performing liquid phase epitaxial growth process. The magnetic garnet single-crystalline layer is formed with a composition of BiaYbRe3-(a+b)GacFe5-c012(0.5<=a<=1.8, 0.3<=b<=2.0, 0.8<=c<=2). A patterned layer is formed on a surface of the magnetic garnet single-crystalline layer. A thermal process is performed to reduce the saturated magnetization.
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