SEMICONDUCTOR FABRICATION METHOD FOR PREVENTING SHORT CIRCUIT BETWEEN SOURCE/DRAIN REGION AND GATE

摘要

PURPOSE: A method for fabricating a semiconductor is provided to prevent short circuit between a source/drain region and a gate by removing an over-grown part of a silicide layer as well as a third sidewall. CONSTITUTION: A gate insulating layer(35) and a polysilicon pattern(37) are formed on a first conductive type semiconductor substrate(31). A second conductive type lightly-doped region is formed on the semiconductor substrate. A first sidewall(41) is formed on a lateral part of the polysilicon pattern. A second sidewall is formed on a lower part of the first sidewall by using undoped polysilicon. A third sidewall is formed on a lateral part of the first sidewall on the second sidewall. A second conductive type highly-doped region is formed on the semiconductor substrate by using the polysilicon pattern and the first to the third sidewalls as a mask. A self-aligned silicide layer(51) is formed on the highly-doped region, the second sidewall, and the polysilicon pattern.