METHOD OF FORMING POLYCIDE STRUCTURE OF SEMICONDUCTOR DEVICE WITHOUT PENETRATION OF FLUORINE

摘要

PURPOSE: A method of forming a polycide structure of a semiconductor device is provided to prevent the degradation of transistor properties by preventing fluorine from penetrating into a gate oxide layer using a TiN layer. CONSTITUTION: A gate oxide layer(2) and a gate electrode(3) are sequentially formed on a semiconductor substrate. A spacer(4-2) is formed at both sidewalls of the gate electrode. A TiN layer(5) and a W silicide layer(6) are sequentially formed on the gate electrode. The TiN layer is annealed at a temperature of 400 or more before the W silicide is formed.