METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE USING TWO-STEP GAP FILLING PROCESSES

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to remove moisture and prevent voids in a trench by using two-step gap filling processes of a SiH4-H2O2 oxide layer. CONSTITUTION: A trench is formed in a semiconductor substrate. A first thermal oxide layer is formed on the trench and removed. A second thermal oxide layer is formed on the trench and treated by hydrophilicity. A first SiH4-H2O2 layer is partially filled in the trench. A first capping layer is deposited on the first SiH4-H2O2 layer. The resultant structure is firstly annealed. A second SiH4-H2O2 layer is entirely filled in the trench and secondly annealed. A second capping layer(19) is deposited on the second SiH4-H2O2 layer.