TRANSISTOR OF LOW LOSS STRUCTURE

摘要

PURPOSE: A transistor of a low loss structure is provided to reduce the signal loss of the transistor by preventing intersections between an air bridge and a gate electrode and removing a mesa layer from a lower part of the air bridge. CONSTITUTION: A transistor of a low loss structure includes a plurality of unit drain electrodes, a plurality of unit source electrodes, a plurality of unit gate electrodes, and a plurality of air bridge. The unit gate electrodes(30) are formed between the unit drain electrodes(10) and the single source electrodes(20). The air bridges(40) are used for connecting the unit source electrodes to each other. The unit gate electrodes and the air bridges do not cross each other in order to reduce the loss of the transistor and improve a gain characteristic and an output characteristic of the transistor.