发明名称 |
CHEMICAL DEPOSITION REACTOR AND METHOD OF FORMING A THIN FILM USING THE SAME |
摘要 |
A chemical deposition reactor capable of switching rapidly from one process gas to another and method of forming a thin film using the same. The reactor of the present invention comprises: a reactor cover, having an inlet and an outlet, for keeping reactant gases from other part of the reactor where the pressure is lower than inside of the reactor; a gas flow control plate, fixed onto the reactor cover, for controlling the gas flow through inlet and outlet by the spacing between itself and the reactor cover; and a substrate supporting plate for confining a reaction cell with the reactor cover. The method of the present invention can be accomplished using the above reactor. In the method, process gases including a deposition gas, a reactant gas and a purge gas are sequentially and repeatedly supplied in the reactor to form a thin film on a substrate. A RF (Radio Frequency) plasma power is applied to a plasma electrode of the reactor synchronised with the supply of at least one among the process gases. |
申请公布号 |
EP1125321(A4) |
申请公布日期 |
2004.06.16 |
申请号 |
EP20000940951 |
申请日期 |
2000.06.19 |
申请人 |
GENITECH, INC. |
发明人 |
LEE, CHUN-SOO;KANG, WON-GU;LEE, KYU-HONG;YI, KYOUNG-SOO |
分类号 |
C23C16/44;C23C16/455;C23C16/509;C23C16/515 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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