| 摘要 |
<p>PURPOSE: A fuse box of a semiconductor memory device and a manufacturing method thereof are provided to be capable of improving the uniformity of laser cutting, uniformly controlling the thickness of an insulating layer on a fuse, and minimizing the occupancy area of the fuse. CONSTITUTION: A fuse box of a semiconductor memory device is provided with a semiconductor substrate(100) having a fuse region and a lower metal line located at the fuse region. At this time, the lower metal line has the first and second region(109a,109b). The fuse box further includes a plurality of upper metal lines(121a,121d) on the lower metal line for being overlapped with the first region of the lower metal line, and a plurality of fuses(135a,135b) located on the upper metal lines for being electrically connected with the second region of the lower metal line and the upper metal lines.</p> |
