| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to reduce process time and to prevent fail of a device in a bonding process by using non-photosensitive polyimide layer. CONSTITUTION: A passivation layer(14) with the thickness of 5000 to 10000 angstrom, a non-photosensitive polyimide layer(15), and a photoresist pattern(16) are sequentially formed on a semiconductor substrate(11) with a metal pad layer(13). The non-photosensitive polyimide layer is selectively etched by performing wet-etching using the photoresist pattern as an etching mask. A curing process is performed on the non-photosensitive polyimide pattern. The metal pad layer is exposed to the outside by etching selectively the passivation layer using the cured non-photosensitive polyimide pattern as an etching mask.
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