发明名称 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, LIQUID CRYSTAL DISPLAY HAVING THE SAME AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A thin film transistor, a manufacturing method thereof, an LCD(Liquid Crystal Display) having the same and a manufacturing method thereof are provided to enhance an electrical contact characteristic between a driving integrated circuit and an electrode pad. CONSTITUTION: A gate pad region(292) is comprised of the insulated first substrate(210), gate electrode pads(270a,270b) equipped on the first substrate(210), the first conductive bump(250) equipped on the gate electrode pads(270a,270b), a drive integrated circuit(500) electrically connected with the first conductive bump(250) and a non-conductive resin(600), as a fixing member, for maintaining the electrical connection state between the first conductive bump(250) and the drive integrated circuit(500). The first conductive bump(250) is comprised of the first protrusion member(251) and the first conductive coating layer(252). A data pad region(293) is comprised of the insulated first substrate(210), data electrode pads(280a,280b) equipped on the first substrate(210), the first conductive bump(250) equipped on the gate electrode pads(280a,280b), a drive integrated circuit(500) electrically connected with the first conductive bump(250) and a non-conductive resin(600), as a fixing member, for maintaining the electrical connection state between the first conductive bump(250) and the drive integrated circuit(500).
申请公布号 KR20040050245(A) 申请公布日期 2004.06.16
申请号 KR20020078017 申请日期 2002.12.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, SEONG YONG;KANG, SEONG CHEOL;OH, WON SIK;YOON, JU YEONG
分类号 G02F1/136;G02F1/13;G02F1/1362;H01L21/60;H01L21/603;H01L21/77;H01L21/84;H01L23/485;H01L27/12 主分类号 G02F1/136
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