METHOD FOR MEASURING TRENCH STRUCTURE IN SEMICONDUCTOR DEVICE AND MEASURING APPARATUS THEREBY

摘要

PURPOSE: A method for measuring a trench structure in a semiconductor device and a measuring apparatus thereby are provided to prevent the damage of the semiconductor device by measuring the depth and the profile of the trench structure without a contact between the measuring apparatus and the semiconductor device. CONSTITUTION: A substrate is loaded on one of points of A to D defined on a plate(100). An optic system(150) is used for condensing beams on a surface of the substrate in order to form a focusing point between the points of the plate. A plurality of driving units(110,160) are used for shifting the focusing point from the point A to the point D by moving the plate. A detection unit(180) measures intensity and angles of the beams reflected from a lower side and a sidewall of a trench structure and an upper surface of the substrate. A data output unit(190) outputs the shifting distance of the focusing point.