| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) slurry composition for polishing a metal line layer is provided to be capable of improving the selectivity ratio of polishing speed for decreasing the polishing speed for an insulating layer and increasing the polishing speed for the metal line layer. CONSTITUTION: A CMP slurry composition contains an abrasive distributed in deionized water, the first oxidizer, and the second oxidizer. The CMP slurry composition further contains a metal-chelate complex and a pH control agent. At this time, fuming alumina or ceria micro powder is used as the abrasive. The fuming alumina has the surface area for the first grain in the range of 130-300 m2/g. Preferably, the first oxidizer is one selected from a group consisting of hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide, and sodium peroxide.
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