发明名称 |
STRUCTURE OF POLISHING PAD FOR IMPROVING CMP SPEED IN SEMICONDUCTOR MANUFACTURING PROCESS |
摘要 |
PURPOSE: The structure of a polishing pad for improving CMP(Chemical Mechanical Polishing) speed in a semiconductor manufacturing process is provided to reduce the damage of a wafer and decrease the generation of particles at the polishing pad itself by changing the upper shape of the polishing pad from a rectangle type structure to a triangle type structure. CONSTITUTION: A polishing pad(15) for improving CMP speed is made of polyurethane. The upper surface(15a) of the polishing pad is like a triangle type structure. The upper surface is used for minimizing the contact surface between the polishing pad and a wafer.
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申请公布号 |
KR20040050511(A) |
申请公布日期 |
2004.06.16 |
申请号 |
KR20020078363 |
申请日期 |
2002.12.10 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HYEON YONG |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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