发明名称 STRUCTURE OF POLISHING PAD FOR IMPROVING CMP SPEED IN SEMICONDUCTOR MANUFACTURING PROCESS
摘要 PURPOSE: The structure of a polishing pad for improving CMP(Chemical Mechanical Polishing) speed in a semiconductor manufacturing process is provided to reduce the damage of a wafer and decrease the generation of particles at the polishing pad itself by changing the upper shape of the polishing pad from a rectangle type structure to a triangle type structure. CONSTITUTION: A polishing pad(15) for improving CMP speed is made of polyurethane. The upper surface(15a) of the polishing pad is like a triangle type structure. The upper surface is used for minimizing the contact surface between the polishing pad and a wafer.
申请公布号 KR20040050511(A) 申请公布日期 2004.06.16
申请号 KR20020078363 申请日期 2002.12.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HYEON YONG
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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