| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve gap-fill in a small size device without voids in spite of using conventional equipment by forming an SOG(Spin On Glass) layer as a lower layer and an HDP(High Density Plasma) oxide layer as an upper layer. CONSTITUTION: A trench is formed in a silicon substrate(11). An oxide layer(19) is formed along the surface of the trench. An SOG based material layer(21) is formed on the entire surface of the resultant structure. An HDP oxide layer(23) is formed on the resultant structure for completely filling the trench. The oxide layer has a thickness of 100 angstrom, or less. A baking process is carried out on the SOG based material layer at the temperature of 100-300 °C.
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