METHOD FOR IMPROVING CD UNIFORMITY IN REFLOW PROCESS

摘要

PURPOSE: A method for improving CD(Critical Dimension) in a reflow process is provided to be capable of reducing shrink bias. CONSTITUTION: A resist layer is coated on a semiconductor wafer. The first baking process and an exposure are carried out on the resultant structure for forming the first micro pattern on the resist layer. The second micro pattern is formed by carrying out a reflow process on the resultant structure using the second baking process. The resist layer has a thickness of 700-30000 angstrom. The reflow process is carried out by using a one-step or multi-step baking process. The reflow process is carried out at the temperature of 120-180 °C for 60-300 second.