发明名称 |
Methods of forming conductive interconnects |
摘要 |
The invention includes a method of forming a conductive interconnect. An electrical node location is defined to be supported by a silicon-containing substrate. A silicide is formed in contact with the electrical node location. The silicide is formed by exposing the substrate to hydrogen, TiCl4 and plasma conditions to cause Ti from the TiCl4 to combine with silicon of the substrate to form TiSix. Conductively doped silicon material is formed over the silicide. The conductively doped silicon material is exposed to one or more temperatures of at least about 800° C. The silicide is also exposed to the temperatures of at least about 800° C.
|
申请公布号 |
US6750089(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20030355538 |
申请日期 |
2003.01.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;DOAN TRUNG TRI;RHODES HOWARD E.;SHARAN SUJIT;IRELAND PHILIP J.;ROBERTS MARTIN CEREDIG |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|