发明名称 Device and method for controlling temperature of semiconductor module
摘要 A device and method for controlling the temperature of a semiconductor module in which the semiconductor module is sandwiched by a first supporting unit and a second supporting unit. An area of the second supporting unit with which the semiconductor module comes into contact is shielded from heat of external ambient atmosphere, and has a temperature sensor provided thereat. The temperature of the first supporting unit is controlled so that the temperature of this area becomes equal to a predetermined temperature. The amount of heat moving from the heat-shielded area to the semiconductor module is small, so that the difference between the temperatures in the region extending from the heat-shielded area and the semiconductor module is small. The first and second supporting units may be separately controlled at different predetermined temperatures. By this, changes in the temperature of the semiconductor module caused by changes in outside air temperature are reduced. The invention aims at making the difference between the temperature of the semiconductor module and a predetermined temperature small when controlling the temperature of the semiconductor module by bringing it into contact with the supporting units whose temperatures have been controlled.
申请公布号 US6748746(B2) 申请公布日期 2004.06.15
申请号 US20020179193 申请日期 2002.06.26
申请人 FUJITSU QUANTUM DEVICES LIMITED 发明人 ONO HARUYOSHI
分类号 H01S5/00;F25B21/02;H01L23/34;H01L23/38;(IPC1-7):F25B21/02 主分类号 H01S5/00
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