发明名称 Chemical vapor deposition system for polycrystalline silicon rod production
摘要 Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the "skin effect."
申请公布号 US6749824(B2) 申请公布日期 2004.06.15
申请号 US20030367365 申请日期 2003.02.13
申请人 ADVANCED SILICON MATERIALS LLC 发明人 KECK DAVID W.;RUSSELL RONALD O.;DAWSON HOWARD J.
分类号 C23C16/24;C23C16/44;(IPC1-7):C01B33/02;C30B29/06 主分类号 C23C16/24
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