发明名称 |
Chemical vapor deposition system for polycrystalline silicon rod production |
摘要 |
Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the "skin effect."
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申请公布号 |
US6749824(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20030367365 |
申请日期 |
2003.02.13 |
申请人 |
ADVANCED SILICON MATERIALS LLC |
发明人 |
KECK DAVID W.;RUSSELL RONALD O.;DAWSON HOWARD J. |
分类号 |
C23C16/24;C23C16/44;(IPC1-7):C01B33/02;C30B29/06 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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