发明名称 |
Shallow trench isolation process |
摘要 |
A shallow trench isolation (STI) process is described. A patterned mask layer is formed on a substrate, and then a trench is formed in the substrate with the mask layer as a mask. A portion of the mask layer around the trench is removed, and a portion of the substrate around the top portion of the trench is removed with the remaining mask layer as a mask. A liner layer is formed in the trench. The liner layer on the top portion of the trench is then removed with a pre-deposition process of an HDP-CVD process. Thereafter, an insulating material is filled into the trench, and the mask layer is removed with an etchant. In STI process, the liner layer comprises a material that can also be etched by the etchant.
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申请公布号 |
US6750117(B1) |
申请公布日期 |
2004.06.15 |
申请号 |
US20020248164 |
申请日期 |
2002.12.23 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUNG YUNG-TAI;CHEN LEE-JEN |
分类号 |
H01L21/762;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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