发明名称 |
Minimally spaced MRAM structures |
摘要 |
A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
|
申请公布号 |
US6750069(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20030454479 |
申请日期 |
2003.06.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DURCAN D. MARK;DOAN TRUNG T.;LEE ROGER;KELLER DENNIS;EARL REN |
分类号 |
H01L21/8246;H01L27/22;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8246 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|