Precision high-K intergate dielectric layer

摘要

A semiconductor device which includes a precision high-K dielectric and formed on a semiconductor substrate and a method of forming the same. The semiconductor device includes at least one dielectric layer having a dielectric constant greater than SiO2. The at least one dielectric layer is deposited by atomic layer deposition (ALD). The ALD deposited layer has precise uniformity, thickness and abrupt atomic interfaces.