发明名称 Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions
摘要 A technique in which a first boundary region is added to the ends of phase zero (0) pattern defining polygons and a second boundary region is added to the ends of phase 180 pattern. This technique can improve line end pattern definition and improve the manufacturability and patterning process window. The added boundary region balances the light on both sides of the line ends, resulting in a more predictable final resist pattern.
申请公布号 US6749970(B2) 申请公布日期 2004.06.15
申请号 US20010016273 申请日期 2001.12.11
申请人 ADVANCED MICRO DEVICES, INC. 发明人 LUKANC TODD P.;SPENCE CHRISTOPHER A.
分类号 G03F1/08;G03F1/00;G03F1/14;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F1/08
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