发明名称 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor
摘要 A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.
申请公布号 US6749944(B2) 申请公布日期 2004.06.15
申请号 US20020252606 申请日期 2002.09.24
申请人 JSR CORPORATION 发明人 NISHIKAWA MICHINORI;SEKIGUCHI MANABU;SHIOTA ATSUSHI;YAMADA KINJI
分类号 B32B7/02;B05D7/00;B05D7/24;C08G77/04;C08G77/50;C09D183/02;C09D183/04;C09D183/06;C09D183/14;H01L21/31;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):B32B9/04 主分类号 B32B7/02
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