发明名称 |
Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor |
摘要 |
A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.
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申请公布号 |
US6749944(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20020252606 |
申请日期 |
2002.09.24 |
申请人 |
JSR CORPORATION |
发明人 |
NISHIKAWA MICHINORI;SEKIGUCHI MANABU;SHIOTA ATSUSHI;YAMADA KINJI |
分类号 |
B32B7/02;B05D7/00;B05D7/24;C08G77/04;C08G77/50;C09D183/02;C09D183/04;C09D183/06;C09D183/14;H01L21/31;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):B32B9/04 |
主分类号 |
B32B7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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