发明名称 Single ended row select for a MRAM device
摘要 A method and apparatus for selecting a rowline in a MRAM device. A rowline select circuit is provided on a first side of each rowline and connects the rowline to ground when a memory cell in the rowline is being written to and to a voltage source when a memory cell in the rowline is being read. A rowline stack select circuit is provided on the second side of each rowline and is connected to one rowline on each plane of memory. When a memory cell is being accessed, the rowline containing that memory cell as well as each other rowline connected to the same rowline stack select circuit are connected to a current source.
申请公布号 US6751117(B2) 申请公布日期 2004.06.15
申请号 US20030435029 申请日期 2003.05.12
申请人 MICRON TECHNOLOGY, INC. 发明人 VOSHELL TOM W.;SEYYEDY MIRMAJID
分类号 G11C11/16;(IPC1-7):G11C11/00 主分类号 G11C11/16
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