发明名称 |
Halo-free non-rectifying contact on chip with halo source/drain diffusion |
摘要 |
A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage. |
申请公布号 |
US6750109(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20020064305 |
申请日期 |
2002.07.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CULP JAMES A.;NAYAK JAWAHAR P.;RAUSCH WERNER A.;SHERONY MELANIE J.;VOLDMAN STEVEN H.;ZAMDMER NOAH D. |
分类号 |
H01L27/04;H01L21/822;H01L29/10;H01L29/49;H01L29/78;H01L29/786;H01L29/861;(IPC1-7):H01L21/331;H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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