| 发明名称 |
Method for making programmable resistance memory element |
| 摘要 |
A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.
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| 申请公布号 |
US6750079(B2) |
申请公布日期 |
2004.06.15 |
| 申请号 |
US20010891157 |
申请日期 |
2001.06.26 |
| 申请人 |
OVONYX, INC. |
发明人 |
LOWREY TYLER;KLERSY PATRICK;HUDGENS STEPHEN J.;MAIMON JON |
| 分类号 |
G11C11/56;H01L27/24;H01L45/00;(IPC1-7):H01L21/00 |
主分类号 |
G11C11/56 |
| 代理机构 |
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